Search results for "Spin valve"
showing 10 items of 27 documents
Thermal stability of magnetic characteristics of Co/Ag/Fe and Co/Ag/Fe20Ni80 spin-valve structures
2017
Abstract We investigated the thermal stability of magnetic characteristics of Co/Ag/Fe and Co/Ag/Fe 20 Ni 80 spin-valve structures. Thin film systems were obtained with the help of sputtering method. For the first type of systems two particular thicknesses ( d ML = 3 and 20 nm) and different disposition of magnetic layers (ML) were used. For the second type different thickness of Ag ( d NML ) spacer layer was used. The research of the crystal structure was performed with the transmission electron microscope. The results demonstrate that every investigated as-deposited sample does not include solid solutions, intermetallic compounds or impurities. It has been found that among the spin-valve…
A spatially resolved investigation of the local, micro-magnetic domain structure of single and polycrystalline Co2FeSi
2007
The Heusler compound Co2FeSi is a promising material for magneto-electronic devices. With a Curie temperature of 1100?K and a saturation magnetization of 6?Bohr magnetons and a high spin polarization at the Fermi edge it fulfils the essential requirements for magnetic sensors or spin valve structures. An essential feature for such devices is the micro-magnetic domain structure. X-ray magnetic circular dichroism?photo emission electron microscopy has been used for a direct observation of the domain structure of single- and polycrystalline samples. The polycrystalline material exhibits a micro-magnetic ripple structure, as it is well known for pure Co and other polycrystalline Heusler compoun…
Giant Magnetoresistance (GMR) Magnetometers
2016
Since its discovering in 1988, the Giant Magnetoresistance (GMR) effect has been widely studied both from the theoretical and the applications points of view. Its rapid development was initially promoted by their extensive use in the read heads of the massive data magnetic storage systems, in the digital world. Since then, novel proposals as basic solid state magnetic sensors have been continuously appearing. Due to their high sensitivity, small size and compatibility with standard CMOS technologies, they have become the preferred choice in scenarios traditionally occupied by Hall sensors. In this chapter, we analyze the main properties of GMR sensors regarding their use as magnetometers. W…
Design, fabrication, and analysis of a spin-valve based current sensor
2004
Abstract In this work, we suggest a novel current sensor design, based on spin valve technology, with a full Wheatstone bridge configuration. The principal characteristic is that the four magnetoresistance sensing elements, fully active, are deposited and patterned at the same time. This way, differences among them should be insignificant, so improving voltage offset and drift temperature parameters. The complete IC fabrication process involves only three lithography steps, making the process cheaper and faster. In order to get a balanced bridge, the measured current must be properly driven, by means of an auxiliary PCB. Some prototypes, with different input impedances, have been fabricated…
A Non-Invasive Thermal Drift Compensation Technique Applied to a Spin-Valve Magnetoresistive Current Sensor
2011
A compensation method for the sensitivity drift of a magnetoresistive (MR) Wheatstone bridge current sensor is proposed. The technique was carried out by placing a ruthenium temperature sensor and the MR sensor to be compensated inside a generalized impedance converter circuit (GIC). No internal modification of the sensor bridge arms is required so that the circuit is capable of compensating practical industrial sensors. The method is based on the temperature modulation of the current supplied to the bridge, which improves previous solutions based on constant current compensation. Experimental results are shown using a microfabricated spin-valve MR current sensor. The temperature compensati…
A DC behavioral electrical model for quasi-linear spin-valve devices including thermal effects for circuit simulation
2011
An advanced model for quasi-linear spin-valve (SV) structures is presented for circuit simulation purposes. The model takes into account electrical and thermal effects in a coupled way in order to allow a coherent representation of the sensor physics for design purposes of electronics applications based on these sensor devices. The model was implemented in Verilog-A and used in a commercial circuit simulator. For testing the model, different SV structures have been specifically fabricated and measured. The characterization included DC measurements as well as steady-state and transient thermal analysis. From the experimental data, the parameters of the model have been extracted. The model re…
Modeling of Magnetoresistive-Based Electrical Current Sensors: A Technological Approach
2007
The utilization of modeling tools can, in many cases, help us in the design and final prototyping of any sort of sensors. In this paper, we describe a finite-element method (FEM) model applied to a hybrid technology involving a full Wheatstone bridge spin-valve-based electrical current sensor. After validating the model against experimental results, we focus our studies on geometrical aspects of the sensor configuration, in order to detect possible deviations that may have occurred during the fabrication process. In this regard, the characteristics of the behavior of the sensor depending on lateral displacements and inclination are included. Moreover, the frequency response of the sensor is…
Electrical ammeter based on spin-valve sensor.
2012
The present work shows an electrical ammeter for laboratory purpose based on a magnetoresistive (MR) spin-valve (SV) sensor. The proposed ammeter measures a 10 A maximum current and offers a maximum frequency response between 150 and 800 kHz depending on the electronics whole gain. These features are due to the use of a new generation MR-SV current sensor and a conditioning electronics that compensates in frequency and temperature the sensor response. With little adjustments in the electronics and changing the position of the sensor with respect to current carrying conductor, the designed instrument is able to measure higher current levels. The work shows the proposed ammeter with its diffe…
Spin Hanle effect in mesoscopic superconductors
2014
Under the terms of the Creative Commons Attribution License 3.0 (CC-BY).
Interface-Assisted Sign Inversion of Magnetoresistance in Spin Valves Based on Novel Lanthanide Quinoline Molecules
2018
Molecules are proposed to be an efficient medium to host spin-polarized carriers, due to their weak spin relaxation mechanisms. While relatively long spin lifetimes are measured in molecular devices, the most promising route toward device functionalization is to use the chemical versatility of molecules to achieve a deterministic control and manipulation of the electron spin. Here, by combining magnetotransport experiments with element-specific X-ray absorption spectroscopy, this study shows the ability of molecules to modify spin-dependent properties at the interface level via metal–molecule hybridization pathways. In particular, it is described how the formation of hybrid states determine…